Pii: 0038-1101(94)90157-0
نویسنده
چکیده
-This paper presents a comprehensive on-line electrical characterization technique addressing the emerging Si/SiGe MOS technology. It demonstrates that the experimental high frequency and low frequency C V characteristics of Si/SiGe heterostructure MOS capacitors can provide accurate material-, process-, and device-related information such as: the valence band offset, Si cap layer thickness, substrate doping, and MOSFET threshold voltages.
منابع مشابه
Pii: 0038-1101(94)e0033-b
A model is proposed for the quantized accumulation layer based on the union of a two-dimensional electron gas contained in several energy subbands and a three-dimensional electron-gas distributed in a continuum of energy levels. The model is valid for both low and high temperatures and is formulated to allow the incorporation of quantum effects in a simulation based on classical models. It ther...
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